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White Electronic Designs
64MB - 2x4Mx64 SDRAM, UNBUFFERED
FEATURES
Burst Mode Operation Auto and Self Refresh capability LVTTL compatible inputs and outputs Serial Presence Detect with EEPROM Fully synchronous: All signals are registered on the positive edge of the system clock Programmable Burst Lengths: 1, 2, 4, 8 or Full Page 3.3V 0.3V Power Supply Dual Rank 144 pin SO-DIMM JEDEC * D1: 27.94mm (1.10")
W3DG648V-D1
DESCRIPTION
The W3DG648V is a 2x4Mx64 synchronous DRAM module which consists of eight 4Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSSOP package for Serial Presence Detect which are mounted on a 144 pin SO-DIMM multilayer FR4 Substrate. This module is structured as 2 ranks of 8Mx64 SDRAM.
* This product is subject to change without notice. NOTE: Consult factory for availability of: * RoHS compliant products * Vendor source control options * Industrial temperature option
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PINOUT PIN 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 FRONT VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 VSS DQMB0 DQMB1 VCC A0 A1 A2 VSS DQ8 DQ9 DQ10 DQ11 VCC DQ12 PIN 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 BACK VSS DQ32 DQ33 DQ34 DQ35 VCC DQ36 DQ37 DQ38 DQ39 VSS DQMB4 DQMB5 VCC A3 A4 A5 VSS DQ40 DQ41 DQ42 DQ43 VCC DQ44 PIN 49 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 FRONT DQ13 DQ14 DQ15 VSS NC NC CLK0 VCC RAS# WE# CS0# CS1# NC VSS NC NC VCC DQ16 DQ17 DQ18 DQ19 VSS DQ20 DQ21 PIN 50 52 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 BACK DQ45 DQ46 DQ47 VSS NC NC CKE0 VCC CAS# CKE1 NC NC CLK1 VSS NC NC VCC DQ48 DQ49 DQ50 DQ51 VSS DQ52 DQ53 PIN 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 BACK DQ22 DQ23 VCC A6 A8 VSS A9 A10/AP VCC DQMB2 DQMB3 VSS DQ24 DQ25 DQ26 DQ27 VCC DQ28 DQ29 DQ30 DQ31 VSS SDA** VCC PIN 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 BACK DQ54 DQ55 VCC A7 BA0 VSS BA1 A11 VCC DQMB6 DQMB7 VSS DQ56 DQ57 DQ58 DQ59 VCC DQ60 DQ61 DQ62 DQ63 VSS SCL** VCC
PIN NAMES
A0 - A11 BA0-1 DQ0-63 CLK0, CLK1 CKE0, CKE1 CS0#, CS1# RAS# CAS# WE# DQMB0-7 VCC VSS SDA SCL DNU NC Address Input (Multiplexed) Select Bank Data Input/Output Clock Input Clock Enable Input Chip Select Input Row Address Strobe Column Address Strobe Write Enable DQMB Power Supply (3.3V) Ground Serial Data I/O Serial Clock Do Not Use No Connect
* These pins are not used in this module. ** These pins should be NC in the system which does not support SPD.
July 2005 Rev. 6
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White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com
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FUNCTIONAL BLOCK DIAGRAM
W3DG648V-D1
S1# WE# S0# DQMB0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQMB1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 LDQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 S0# WE# LDQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 S1# WE# DQMB4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQMB5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 LDQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 S0# WE# LDQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 S1# WE#
DQMB2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQMB3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
LDQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15
S0#
WE#
LDQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15
S1#
WE#
DQMB6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQMB7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
LDQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15
S0#
WE#
LDQM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15
S1#
WE#
*CLOCK WIRING
RAS# CAS# CKE0 CKE1 BA0-BA1 A0-A11 RAS#: SDRAM CAS#: SDRAM CKE0: SDRAM CKE1: SDRAM BA0-BA1: SDRAM A0-A11: SDRAM
CLOCK INPUT *CLK0 *CLK1
SDRAMS 4 SDRAMS 4 SDRAMS
* Wire per clock Loading Table/Wiring Diagrams
VCC VSS
SDRAM SDRAM
SERIAL PD SCL A0 A1 A2 SDA
July 2005 Rev. 6
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White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com
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ABSOLUTE MAXIMUM RATINGS
Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Current Symbol VIN, VOUT VCC, VCCQ TSTG PD IOS Value -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 8 50
W3DG648V-D1
Units V V C W mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: VSS = 0V, TA = 0C to +70C Parameter Supply Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Symbol VCC VIH VIL VOH VOL ILI Min 3.0 2.0 -0.3 2.4 -- -10 Typ 3.3 3.0 -- -- -- -- Max 3.6 VCCQ+0.3 0.8 -- 0.4 10 Unit V V V V V A 1 2 IOH= -2mA IOL= -2mA 3 Note
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is 3ns. 2. VIL (min)= -2.0V AC. The undershoot voltage duration is 3ns. 3. Any input 0V VIN VCCQ Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
TA = 25C, f = 1MHz, VCC = 3.3V, VREF = 1.4V 200mV
Parameter Input Capacitance (A0-A11) Input Capacitance (RAS#,CAS#,WE#) Input Capacitance (CKE0, CKE1) Input Capacitance (CLK0, CLK1) Input Capacitance (CS0#, CS1) Input Capacitance (DQMB0-DQMB7) Input Capacitance (BA0-BA1) Data Input/Output Capacitance (DQ0-DQ63) Symbol CIN1 CIN2 CIN3 CIN4 CIN5 CIN6 CIN7 COUT Max 25 25 25 21 25 12 25 12 Unit pF pF pF pF pF pF pF pF
July 2005 Rev. 6
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OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0C to +70C)
Version Parameter Operating Current (One bank active) Precharge Standby Current in Power Down Mode Symbol ICC1 Conditions Burst Length = 1 tRC tRC(min) IOL = 0mA CKE VIL(max), tCC = 10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tcc =10ns Input signals are charged one time during 20 CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable Io = mA Page burst 4 Banks activated tCCD = 2CLK tRC tRC(min) CKE 0.2V 133/100 1,000
W3DG648V-D1
Units mA
Note 1
ICC2P ICC2PS ICC2N
16 16 240
mA
Precharge Standby Current in Non-Power Down Mode
ICC2NS ICC3P ICC3PS ICC3N
mA 120 50 50 360 240 mA mA mA
Active Standby Current in Power-Down Mode
Active Standby Current in Non-Power Down Mode
ICC3NS ICC4
Operating Current (Burst mode)
1,200
mA
1
Refresh Current Self Refresh Current
Notes: 1. Measured with outputs open. 2. Refresh period is 64ms.
ICC5 ICC6
1,840 24
mA mA
2
July 2005 Rev. 6
4
White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com
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PACKAGE DIMENSIONS FOR D1
Ordering Information W3DG648V10D1 W3DG648V7D1 W3DG648V75D1 Speed 100MHz 133MHz 133MHz CAS Latency CL=2 CL=2 CL=3
W3DG648V-D1
Height* 27.94 (1.100") 27.94 (1.100") 27.94 (1.100")
NOTES: * Consult Factory for availability of RoHS compliant products. (G = RoHS Compliant) * Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case "x" in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others) * Consult factory for availability of industrial temperature (-40C to 85C) option
PACKAGE DIMENSIONS FOR D1
67.72 (2.661 Max) 2.01 (0.079 Min) 4.32 (0.170) MAX.
3.99 (0.157)
27.94 (1.100) Max 19.99 (0.787)
23.14 (0.913) 28.2 (1.112)
32.79 (1.291) 4.60 (0.181) 1.50 (0.059)
0.99 0.10 (0.039) ( 0.004)
* All Dimensions are in millimeters and (inches).
July 2005 Rev. 6
5
White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com
White Electronic Designs
Document Title
64MB - 2x4Mx64 SDRAM, UNBUFFERED
W3DG648V-D1
Revision History Rev #
Rev 0 Rev 1 Rev 2 Rev 3
History
Created Datasheet Corrected part number on the ordering information table Changed from Advanced to Final Updated Specs 3.1 Removed ED from part number
Release Date
11-15-01 6-25-02 9-6-02 5-04
Status
Advanced Advanced Final Final
Rev 4
4.1 Added RoHS notes 4.2 Added source control notes 4.3 Industrial temperature option
4-05
Final
Rev 5 Rev 6
5.1 Updated pin configurations 6.1 Added package height to cover page 6.2 Update block diagram 6.3 Removed note 3 from page 4
6-05 7-05
Final Final
July 2005 Rev. 6
6
White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com

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